B. Jayant Baliga

Bantval Jayant Baliga (born in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).

In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and in 2024, won the Finnish Millennium Technology Prize for his invention of the IGBT. Provided by Wikipedia
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  1. 1
    Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry
    by B. Jayant Baliga
    Published 2020-01-01
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  2. 2
    Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement
    by Ajit Kanale, B. Jayant Baliga
    Published 2021-01-01
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  3. 3
    2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
    by Aditi Agarwal, Kijeong Han, B. Jayant Baliga
    Published 2020-01-01
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    Article
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