High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

by Loke Wan Khai, Wang Yue, Lee Kwang Hong, Liu Zhihong, Xie Hanlin, Chiah Siau Ben, Kenneth Lee Eng Kian, Zhou Xing, Chuan Seng Tan, Ng Geok Ing, Eugene A. Fitzgerald, Yoon Soon Fatt
Published 2020-01-01