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Dawidowski, W.
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Dawidowski, W.
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Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
by
Dawidowski
,
W
.
,
de la Cruz, V.G
,
Gabás, M.
,
Jadczak, J.
,
López-Escalante, M.C
,
Radziewicz, D.
,
Ściana, B.
Published 2022
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Related Subjects
AP-MOVPE
Alloying
Alloying effect
Atmospheric pressure
Dilute-nitride
Epilayers
GaAsN epilayers
Gallium alloys
Gallium arsenide
HRXRD
III-V semiconductors
III/V semiconductors
Interstitial complexes
Interstitial defects
Lattice mismatch
Local strains
Metallorganic vapor phase epitaxy
Nitrogen interstitial complex
Raman spectroscopy
Semiconducting gallium
Semiconductor alloys
Semiconductor quantum wells
X ray diffraction analysis
X ray photoelectron spectroscopy
XPS
dilute nitrides
nitrogen interstitial complexes
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