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Efi Dwi Indari
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Efi Dwi Indari
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Efi Dwi Indari
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1
Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation
by
Efi
Dwi
Indari
,
Yoshiyuki Yamashita
,
Ryu Hasunuma
,
Hiroshi Oji
,
Kikuo Yamabe
Published 2019-10-01
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Article
2
Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface
by
Efi
Dwi
Indari
,
Yoshiyuki Yamashita
,
Ryu Hasunuma
,
Takahiro Nagata
,
Shigenori Ueda
,
Kikuo Yamabe
Published 2019-04-01
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