Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

by Esmat Farzana, Max F. Chaiken, Thomas E. Blue, Aaron R. Arehart, Steven A. Ringel
Published 2019-02-01

Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

by Esmat Farzana, Akhil Mauze, Joel B. Varley, Thomas E. Blue, James S. Speck, Aaron R. Arehart, Steven A. Ringel
Published 2019-12-01

Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches

by Jianfeng Wang, Kelsey Fast Jorgensen, Esmat Farzana, Kai Shek Qwah, Morteza Monavarian, Zachary J. Biegler, Thomas Mates, James S. Speck
Published 2021-08-01

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

by Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel
Published 2020-02-01

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}

by Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien-Lien Huang, Arda Genc, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, Jinwoo Hwang
Published 2019-11-01