In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

by Yue Wang, Kwang Hong Lee, Wan Khai Loke, Siau Ben Chiah, Xing Zhou, Soon Fatt Yoon, Chuan Seng Tan, Eugene Fitzgerald
Published 2018-11-01

Photo-attachment of biomolecules for miniaturization on wicking Si-nanowire platform.

by He Cheng, Han Zheng, Jia Xin Wu, Wei Xu, Lihan Zhou, Kam Chew Leong, Eugene Fitzgerald, Raj Rajagopalan, Heng Phon Too, Wee Kiong Choi
Published 2015-01-01

Technology and market evaluation for semiconductor nanowire transistors

by Omampuliyur, Rajamouly Swaminathan
Published 2009

A market analysis for high efficiency multi-junction solar cells grown on SiGe

by Judkins, Zachara Steele
Published 2008

Novel thermoelectric materials development, existing and potential applications, and commercialization routes

by Bertreau, Philippe
Published 2007

Managing variation in near-constraint systems

by Farrelly, Kevin L., 1964-
Published 2009