Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process

by Gouker, Pascale M., Gadlage, Matthew J., Bhuva, Bharat L., Narasimham, Balaji, Schrimpf, Ronald D.
Published 2010

Radiation effects in MIT Lincoln Lab 3DIC technology

by Gouker, Pascale M., Wyatt, Peter W., Yost, Donna-Ruth W., Chen, Chenson K., Chen, Chang-Lee, Knecht, Jeffrey M., Keast, Craig L.
Published 2010

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

by Keast, Craig L., Wyatt, Peter W., Gouker, Pascale M., Gadlage, Matthew J., Narasimham, Balaji, Bhuva, Bharat L., Hughes, Harold, McMarr, Patrick, McMorrow, Dale
Published 2010

Channel engineering of SOI MOSFETs for RF applications

by Keast, Craig L., Wyatt, Peter W., Healey, Paul D., Yost, Donna-Ruth W., Gouker, Pascale M., Chen, Chenson K., Kedzierski, Jakub T., Knecht, Jeffrey M., Chen, Chang-Lee
Published 2010

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers

by Keast, Craig L., Chen, Chang-Lee, Chen, Chenson K., Yost, Donna-Ruth W., Knecht, Jeffrey M., Wyatt, Peter W., Burns, James A., Warner, Keith, Gouker, Pascale M., Healey, Paul D., Wheeler, Bruce D.
Published 2010

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

by Gouker, Pascale M., Gadlage, Matthew J., Ahlbin, Jonathan R., Ramachandra, Vishwanath, Dinkin, Cody A., Bhuva, Bharat L., Narasimham, Balaji, Schrimpf, Ronald D., McCurdy, Michael W., Alles, Michael L., Reed, Robert A., Mendenhall, Marcus H., Massengill, Lloyd W., Shuler, Robert L., McMorrow, Dale
Published 2010