Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

by S. Besendörfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A. Vescan, J. Friedrich, T. Erlbacher
Published 2020-04-01

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

by G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan
Published 2014-12-01