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Huang H. L.
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Huang H. L.
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Huang H. L.
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1
Si doping in MOCVD grown (010) β-(AlxGa1-x)2O3thin films
by
Bhuiyan, A.F.M.A.U
,
Feng, Z.
,
Fiedler, A.
,
Huang
,
H
.-
L
,
Hwang, J.
,
Meng, L.
,
Mou, S.
,
Neal, A.T
,
Rajan, S.
,
Steinbrunner, E.
,
Zhao, H.
Published 2022
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Article
2
Differentially expressed homologous genes reveal interspecies differences of Paragonimus proliferus based on transcriptome analysis
by
Li S. H.
,
Li S. D.
,
Li H. J.
,
Li J. Y.
,
Xu J. J.
,
Chang G. J.
,
Yang L. J.
,
Wang W. Q.
,
Zhang Y. L.
,
Ma Z. Q.
,
He S. M.
,
Wang W. L.
,
Huang
H
.
L
.
Published 2020-08-01
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Article
3
The stydy of topography and magnetic properties on sputtered Co thin films
by
Lin Shia Yu
,
林夏玉
Published 1999
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...
Huang
H.L
....
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Related Subjects
Al composition
Carrier concentration
Chemical vapor deposited
Gallium compounds
Hall mobility
High al
Lattice mismatch
Lows-temperatures
Metallorganic chemical vapor deposition
Metalorganics
Secondary ion mass spectrometry
Secondary ion mass spectroscopy
Semiconductor doping
Si-doping
Structural and electrical properties
Substrates
Temperature
Thin films
Thin-films
β -Ga2O3
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