Oxides for Rectenna Technology

by Ivona Z. Mitrovic, Saeed Almalki, Serdar B. Tekin, Naser Sedghi, Paul R. Chalker, Stephen Hall
Published 2021-09-01

IEEE Access Special Section: Emerging Technologies for Energy Internet

by Huiqing Wen, Yung C. Liang, Ivona Z. Mitrovic, Depeng Li, Moncef Tayahi, Fei Lu, Xianming Ye
Published 2020-01-01

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

by Zongjie Shen, Chun Zhao, Yanfei Qi, Wangying Xu, Yina Liu, Ivona Z. Mitrovic, Li Yang, Cezhou Zhao
Published 2020-07-01

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

by Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao
Published 2020-01-01

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

by J. T. Gibbon, L. Jones, J. W. Roberts, M. Althobaiti, P. R. Chalker, Ivona Z. Mitrovic, V. R. Dhanak
Published 2018-06-01

Effect of Annealing Temperature for Ni/AlO_x/Pt RRAM Devices Fabricated with Solution-Based Dielectric

by Zongjie Shen, Yanfei Qi, Ivona Z. Mitrovic, Cezhou Zhao, Steve Hall, Li Yang, Tian Luo, Yanbo Huang, Chun Zhao
Published 2019-07-01

Memristive Non-Volatile Memory Based on Graphene Materials

by Zongjie Shen, Chun Zhao, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Jiacheng Wen, Yanbo Huang, Puzhuo Li, Cezhou Zhao
Published 2020-03-01

Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process

by Laurie J. Phillips, Atef M. Rashed, Robert E. Treharne, James Kay, Peter Yates, Ivona Z. Mitrovic, Ayendra Weerakkody, Steve Hall, Ken Durose
Published 2015-12-01

Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2

by Max Birkett, Christopher N. Savory, Mohana K. Rajpalke, Wojciech M. Linhart, Thomas J. Whittles, James T. Gibbon, Adam W. Welch, Ivona Z. Mitrovic, Andriy Zakutayev, David O. Scanlon, Tim D. Veal
Published 2018-08-01

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

by Qifeng Lu, Yifei Mu, Joseph W. Roberts, Mohammed Althobaiti, Vinod R. Dhanak, Jingjin Wu, Chun Zhao, Ce Zhou Zhao, Qian Zhang, Li Yang, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker
Published 2015-12-01