Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Appl...

by Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Kai-Chun Yang, Hisang-Hua Hsu, Simon M. Sze, Edward Yi Chang
Published 2018-01-01

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

by Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang
Published 2020-11-01