The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

by Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang
Published 2019-01-01

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking

by Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong
Published 2019-01-01