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Joerg Appenzeller
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Joerg Appenzeller
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Joerg Appenzeller
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1
Toward CMOS like devices from two-dimensional channel materials
by
Peng Wu
,
Joerg
Appenzeller
Published 2019-10-01
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Article
2
Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
by
Ashish V. Penumatcha
,
Ramon B. Salazar
,
Joerg
Appenzeller
Published 2016-06-01
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Article
3
Design Rules for High Performance Tunnel Transistors From 2-D Materials
by
Hesameddin Ilatikhameneh
,
Gerhard Klimeck
,
Joerg
Appenzeller
,
Rajib Rahman
Published 2016-01-01
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Article
4
A Novel Compound Synapse Using Probabilistic Spin–Orbit-Torque Switching for MTJ-Based Deep Neural Networks
by
Vaibhav Ostwal
,
Ramtin Zand
,
Ronald DeMara
,
Joerg
Appenzeller
Published 2019-01-01
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Article
5
Spin-torque switching of a nano-magnet using giant spin hall effect
by
Ashish V. Penumatcha
,
Suprem R. Das
,
Zhihong Chen
,
Joerg
Appenzeller
Published 2015-10-01
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Article
6
Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials
by
Hesameddin Ilatikhameneh
,
Yaohua Tan
,
Bozidar Novakovic
,
Gerhard Klimeck
,
Rajib Rahman
,
Joerg
Appenzeller
Published 2015-01-01
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Article
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