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Kangchun Qu
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Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress
by
Haiou Li
,
Kangchun
Qu
,
Xi Gao
,
Yue Li
,
Yonghe Chen
,
Zhiping Zhou
,
Lei Ma
,
Fabi Zhang
,
Xiaowen Zhang
,
Tao Fu
,
Xingpeng Liu
,
Yingbo Liu
,
Tangyou Sun
,
Honggang Liu
Published 2020-03-01
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