Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films

by Anteney, I M, Parker, G J, Ashburn, P, Kemhadjian, H A
Published 2000

The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films

by Anteney, I.M, Parker, G.J, Ashburn, P., Kemhadjian, H.A
Published 2001

Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth

by Pengpad, P., Osman, K., Lloyd, N.S, Bonar, J.M, Ashburn, P., Kemhadjian, H.A, Hamel, J.S, Bagnall, D.M
Published 2004