Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

by Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
Published 2019-07-01

Growth of InN ultrathin films on AlN for the application to field-effect transistors

by Dayeon Jeong, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
Published 2020-12-01

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

by Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, Hiroshi Fujioka
Published 2017-02-01

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

by Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Published 2016-08-01

Coincident postsynaptic activity gates presynaptic dopamine release to induce plasticity in Drosophila mushroom bodies

by Kohei Ueno, Ema Suzuki, Shintaro Naganos, Kyoko Ofusa, Junjiro Horiuchi, Minoru Saitoe
Published 2017-01-01

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

by Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hideto Miyake, Hiroshi Fujioka
Published 2018-11-01

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

by Kohei Ueno, Taiga Fudetani, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Published 2017-12-01

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

by Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka
Published 2017-05-01