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Lee Min Yung
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Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
by
Hyeon-Bhin Jo
,
Jung-Ho Park
,
Seung-Woo Son
,
Ji-Min Baek
,
Do-Young Yun
,
Yeonsung Kang
,
Yong-Hyun Seo
,
Lee
Min
Yung
,
Jung-Hee Lee
,
Tae-Woo Kim
,
Dae-Hyun Kim
Published 2018-07-01
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