Maria Tchernycheva

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Maria Tchernycheva () born in Saint Petersburg, Russia is working in the field of photonics and nanotechnology at both the Universite Paris-Sud XI and Centre national de la recherche scientifique. She has an h-index of 54 with the most cited work being ''Systematic experimental and theoretical investigation of intersubband absorption in Ga N/ Al N quantum wells'' which was published in 2006 and received 211 since that year. Provided by Wikipedia
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  1. 1
    Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation
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  2. 2
    Evaluation of Effective Elastic Properties of Nitride NWs/Polymer Composite Materials Using Laser-Generated Surface Acoustic Waves
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  3. 3
    High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
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  4. 4
    Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes
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  5. 5
    GaN/Ga<sub>2</sub>O<sub>3</sub> Core/Shell Nanowires Growth: Towards High Response Gas Sensors
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  6. 6
    Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy
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  7. 7
    Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
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  8. 8
    Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
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  9. 9
    Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
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  10. 10
    Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane
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