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Mohamed Alsharef
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High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
by
Erdin Ture
,
Peter Bruckner
,
Birte-Julia Godejohann
,
Rolf Aidam
,
Mohamed
Alsharef
,
Ralf Granzner
,
Frank Schwierz
,
Rudiger Quay
,
Oliver Ambacher
Published 2016-01-01
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