Compressively-strained, buried-channel $Si_{0.7}$Ge$_{0.3}$ p-MOSFETs fabricated on SiGe virtual substrates using a 0.25 µm CMOS process

by Temple, Matthew P., Paul, Douglas J., Tang, Yue T., Waite, Andrew M., Cerrina, Claudia, Evans, Alan G.R, Li, Xiabbing, Zhang, Jing, Olsen, Sarah H., O'Neill, Anthony G.
Published 2004