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Ostinelli, O.J.S
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Ostinelli, O.J.S
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1
High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec--Part II: Dynamic Switching and RF Performance
by
Arabhavi, A.M
,
Bolognesi, C.R
,
Bonomo, G.
,
Han, D.
,
Ostinelli
,
O.J
.S
,
Ruiz, D.C
Published 2022
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2
High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec--Part I: Material and Device Characterization, DC Performance, and Simulation
by
Arabhavi, A.M
,
Bolognesi, C.R
,
Bonomo, G.
,
Han, D.
,
Ostinelli
,
O.J
.S
,
Ruiz, D.C
Published 2022
Call Number:
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Article
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Related Subjects
Atomic layer deposition
Atomic layer deposition (ALD)
Atomic-layer deposition
Computer circuits
Drain current
GaInAs
High electron mobility transistors
Impact ionization
Inverse subthreshold slope
Inverse subthreshold slopes
Logic gates
MOS devices
MOS-FET
MOSFET
MOSFET devices
MOSFETs
RF performance
Semiconductor alloys
Steep slope
impact ionization
inverse subthreshold slope (SS)
steep slope
Clocks
Cutoff frequency
Digital devices
Display devices
Energy consumption
Energy gap
Energy utilization
Energy-consumption
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