Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using <italic>In-Situ</italic> ALD Digital O₃ Treatment

by M.-S. Yeh, G.-L. Luo, F.-J. Hou, P.-J. Sung, C. J. Wang, C.-J. Su, C.-T. WU, Y.-C. Huang, T.-C. Hong, B.-Y. Chen, K.-M. Chen, Y.-C. WU, M. Izawa, M. Miura, M. Morimoto, H. Ishimura, Y.-J. Lee, W.-F. Wu, W.-K. Yeh
Published 2018-01-01