Tomas Palacios

Tomás A. Palacios Gutiérrez (born 1978) is a Spanish–American Electrical & Microelectronics Engineer known for his work in advanced device and material design. He holds the chair ''Clarence J. LeBel Professor of Electrical Engineering and Computer Science'' at the Massachusetts Institute of Technology and director of Microsystems Technology Laboratories (MTL). Palacios is known for inventing a super-thin 'sheet' that can charge mobile phones with out electricity. Provided by Wikipedia
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  1. 1
    Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
    by Palacios, Tomas
    Published 2019
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  2. 2
    The Challenges and Rewards of Industry/University Collaborative Research
    by Palacios, Tomas
    Published 2010
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  3. 3
    Modelo numérico para flujos bidimensionales de fluidos no-newtonianos sobre topografías complejas
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  4. 4
    Nanostructured GaN transistors
    by Chowdhury, Nadim, Palacios, Tomas
    Published 2019
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  5. 5
    High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
    by Lu, Bin, Palacios, Tomas
    Published 2012
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  6. 6
    Room-Temperature Ballistic Transport in III-Nitride Heterostructures
    by Matioli, Elison, Palacios, Tomas
    Published 2016
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  7. 7
    On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si
    by Chung, Jinwook, Lu, Bin, Palacios, Tomas
    Published 2010
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  8. 8
    MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
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  9. 9
    Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si
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  10. 10
    N-polar AlN buffer growth by MOVPE for transistor applications
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  11. 11
    MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
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  12. 12
    On-wafer seamless integration of GaN and Si (100) electronics
    by Chung, Jinwook, Lu, Bin, Palacios, Tomas
    Published 2010
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  13. 13
    GaN power electronics
    by Lu, Bin, Piedra, Daniel, Palacios, Tomas
    Published 2012
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  14. 14
    Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter
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  15. 15
    Applications of Graphene Devices in RF Communications
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  16. 16
    Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
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  17. 17
    Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
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  18. 18
    GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics
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  19. 19
    Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs
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  20. 20
    High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
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