Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

by A. Defresne, O. Plantevin, Pere Roca i Cabarrocas
Published 2016-12-01

Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD

by Marta Chrostowski, José Alvarez, Alessia Le Donne, Simona Binetti, Pere Roca i Cabarrocas
Published 2019-11-01

High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

by Ronan Léal, Farah Haddad, Gilles Poulain, Jean-Luc Maurice, Pere Roca i Cabarrocas
Published 2017-02-01

Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires

by Clément Marchat, Letian Dai, José Alvarez, Sylvain Le Gall, Jean-Paul Kleider, Soumyadeep Misra, Pere Roca i Cabarrocas
Published 2019-12-01

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlO_x for Crystalline Si Passivation

by Zhen Zheng, Junyang An, Ruiling Gong, Yuheng Zeng, Jichun Ye, Linwei Yu, Ileana Florea, Pere Roca i Cabarrocas, Wanghua Chen
Published 2021-07-01

Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique

by Amornrat Limmanee, Joaquim Nassar, Igor P. Sobkowicz, Jaran Sritharathikhun, Kobsak Sriprapha, Guillaume Courtois, Francois Moreau, Pere Roca I Cabarrocas
Published 2014-01-01

Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation

by Zhaoguo Xue, Mingkun Xu, Yaolong Zhao, Jimmy Wang, Xiaofan Jiang, Linwei Yu, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen, Pere Roca i Cabarrocas
Published 2016-09-01