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    Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (<inline-formula> <mml:math id="mm100" display="block"> <mml:semantics> <mml:mrow> <mml:mn>11</mml:mn> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>2</mml:mn> </mml:mrow> </mml:semantics> </mml:math> </inline-formula>) and Non-Polar (<inline-formula> <mml:math id="mm200" display="block"> <mml:semantics> <mml:mrow> <mml:mn>11</mml:mn> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>0</mml:mn> </mml:mrow> </mml:semantics> </mml:math> </inline-formula>) GaN Nanorods
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    Hybrid Top-Down/Bottom-Up Fabrication of a Highly Uniform and Organized Faceted AlN Nanorod Scaffold
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