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Privalov E. N.
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Privalov E. N.
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Privalov E. N.
'
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1
Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors
by
Gorev N. B.
,
Kodzhespirova I. F.
,
Privalov
E
.
N
.
Published 2007-12-01
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Article
2
Capacitance-voltage measurements in GaAs thin-film epitaxial structures
by
Gorev N. B.
,
Kodzhespirova I. F.
,
Privalov
E
.
N
.
Published 2009-10-01
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Article
3
Diagnostics of deep centers on the border of film–substrate in thin-film all-epitaxial structures of GaAs
by
Gorev N. B.
,
Kodzhespirova I. F.
,
Privalov
E
.
N
.
Published 2010-08-01
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Article
4
Capacitance-voltage characteristics of GaAs ion-implanted structures
by
Privalov
E
.
N
.
,
Gorev N. B.
,
Kodzhespirova I. F.
Published 2008-08-01
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Article
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