Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

by Evan M. Cornuelle, Tyler A. Growden, David F. Storm, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Vikrant Gokhale, Laura B. Ruppalt, James G. Champlain, Prudhvi Peri, Martha R. McCartney, David J. Smith, David J. Meyer, Paul R. Berger
Published 2020-05-01