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Tessmann, A.
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Tessmann, A.
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High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology
by
Chartier, S.
,
John, L.
,
Leuther, A.
,
Massler, H.
,
Merkle, T.
,
Tessmann
,
A
.
Published 2022
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Related Subjects
Amplifier circuits
Amplifiers
Electron mobility
Gain cell
Gate-length
High electron mobility transistors
High electron-mobility transistors
High gain
High-electron-mobility transistor
InGaAs-on-insulator (InGaAs-OI)
Ingaas-on-insulator
Light amplifiers
Semiconducting indium
Semiconducting indium gallium arsenide
Silicon
Six stages
Substrates
THz
Timing circuits
Transferred substrate
high-electron-mobility transistor (HEMT)
silicon
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