First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

by Yue Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu
Published 2021-02-01

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

by Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang
Published 2020-04-01

Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate

by Pengfei Li, Shuhua Wei, Xuanwu Kang, Yingkui Zheng, Jing Zhang, Hao Wu, Ke Wei, Jiang Yan, Xinyu Liu
Published 2021-04-01

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

by Yue Sun, Xuanwu Kang, Yingkui Zheng, Jiang Lu, Xiaoli Tian, Ke Wei, Hao Wu, Wenbo Wang, Xinyu Liu, Guoqi Zhang
Published 2019-05-01