Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

by Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen
Published 2020-12-01

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al₂O₃/SiO₂ Bi-Layer Passivation at 2 GHz

by Xinxin Yu, Wenxiao Hu, Jianjun Zhou, Bin Liu, Tao Tao, Yuechan Kong, Tangsheng Chen, Youdou Zheng
Published 2021-01-01

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

by Wen Wang, Xinxin Yu, Jianjun Zhou, Dunjun Chen, Kai Zhang, Cen Kong, Yuechan Kong, Zhonghui Li, Tangsheng Chen
Published 2018-01-01

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

by Yu Fu, Ruimin Xu, Jianjun Zhou, Xinxin Yu, Zhang Wen, Yuechan Kong, Tangsheng Chen, Yong Zhang, Bo Yan, Jijun He, Yuehang Xu
Published 2019-01-01