Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures

by Zeyang Ren, Guansheng Yuan, Jinfeng Zhang, Lei Xu, Jincheng Zhang, Wanjiao Chen, Yue Hao
Published 2018-06-01

Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer

by Zeyang Ren, Zhenfang Liang, Kai Su, Yufei Xing, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Yue Hao
Published 2021-01-01

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃ Gate Dielectric

by Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang, Jincheng Zhang, Kai Su, Yue Hao
Published 2020-01-01

Polycrystalline diamond RF MOSFET with MoO3 gate dielectric

by Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Rudai Quan, Jiayin Yang, Zhiyu Lin, Yue Hao
Published 2017-12-01

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO_x/Al₂O₃ Gate Dielectrics

by Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao
Published 2020-01-01

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

by Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin, Yue Hao
Published 2019-01-01

Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

by Teng Jiang, Shengrui Xu, Jincheng Zhang, Peixian Li, Jun Huang, Zeyang Ren, Jiaduo Zhu, Zhibin Chen, Ying Zhao, Yue Hao
Published 2016-03-01

H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric

by Zeyang Ren, Yufei Xing, Dandan Lv, Jiamin Xu, Jinfeng Zhang, Jincheng Zhang, Kai Su, Chunfu Zhang, Hong Zhang, Qi He, Yue Hao
Published 2021-03-01