Showing 1 - 20 results of 68 for search 'del Alamo, Jesus A.', query time: 0.30s Refine Results
  1. 1
    The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects
    by del Alamo, Jesus A.
    Published 2014
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  2. 2
    Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies
    by del Alamo, Jesus A.
    Published 2015
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  3. 3
    Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress
    by Wu, Yufei, del Alamo, Jesus A
    Published 2020
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  4. 4
    Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
    by Demirtas, Sefa, del Alamo, Jesus A.
    Published 2010
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  5. 5
    Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors
    by Demirtas, Sefa, del Alamo, Jesus A.
    Published 2012
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  6. 6
    RF Power Degradation of GaN High Electron Mobility Transistors
    by Joh, Jungwoo, del Alamo, Jesus A.
    Published 2012
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  7. 7
    Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs
    by Jin, Donghyun, del Alamo, Jesus A
    Published 2017
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  8. 8
    Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors
    by Joh, Jungwoo, del Alamo, Jesus A.
    Published 2012
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  9. 9
    Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs
    by Guo, Alex, del Alamo, Jesus A.
    Published 2020
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  10. 10
    A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
    by Joh, Jungwoo, del Alamo, Jesus A.
    Published 2010
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  11. 11
    Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
    by del Alamo, Jesus A., Xia, Ling
    Published 2010
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  12. 12
    Mobility enhancement in indium-rich N-channel In[subscript x]Ga[subscript 1-x]As HEMTs by application of <110> uniaxial strain
    by Xia, Ling, del Alamo, Jesus A.
    Published 2012
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  13. 13
    Positive-bias temperature instability (PBTI) of GaN MOSFETs
    by Guo, Alex, del Alamo, Jesus A.
    Published 2016
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  14. 14
    Impact of 110 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
    by Xia, Ling, del Alamo, Jesus A.
    Published 2012
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    Article
  15. 15
    Fabrication and Characterization of Through-Substrate Interconnects
    by del Alamo, Jesus A., Wu, Joyce H.
    Published 2010
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  16. 16
    Scalability of sub-100 nm thin-channel InAs PHEMTs
    by del Alamo, Jesus A., Kim, Dae-Hyun
    Published 2010
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  17. 17
    The prospects for 10 nm III-V CMOS
    by del Alamo, Jesus A., Kim, D.-H
    Published 2012
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  18. 18
    30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz
    by Kim, Dae-Hyun, del Alamo, Jesus A.
    Published 2012
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  19. 19
    Injection velocity in thin-channel InAs HEMTs
    by Kim, Tae-Woo, del Alamo, Jesus A.
    Published 2012
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  20. 20
    Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications
    by Kim, Dae-Hyun, del Alamo, Jesus A.
    Published 2012
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