Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency switching efficiency. In this study, better curr...

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Bibliographic Details
Main Authors: Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Microwave annealing
normally off
p-GaN gate HEMT
dynamic behavior
Online Access:https://ieeexplore.ieee.org/document/8843935/

Internet

https://ieeexplore.ieee.org/document/8843935/

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