Doping of Active Region in Long Wavelength InP-Based Transistor Lasers
The effects of doping in the multiquantum well (MQW) active region on the properties of InP-based long wavelength deep ridge transistor lasers (TLs) are numerically studied. Doping in the MQWs is shown to lead to a decrease of the slope efficiency and a notable increase of the current gain of the TL...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7466785/ |