In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change...

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Bibliographic Details
Main Authors: Takeshi Nagase, Ryo Yamashita, Jung-Goo Lee
Format: Article
Language:English
Published: AIP Publishing LLC 2018-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5031450