A vertical silicon-graphene-germanium transistor
Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium transistor with a Schottky emitter enabling a...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2019-10-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-12814-1 |