Advances in ultrashallow doping of silicon

Advances in ultrashallow doping of silicon

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolaye...

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Bibliographic Details
Main Authors: Chufan Zhang, Shannan Chang, Yaping Dan
Format: Article
Language:English
Published: Taylor & Francis Group 2021-01-01
Series:Advances in Physics: X
Subjects:
ultrashallow junctions
molecular monolayer doping
molecular beam epitaxy
ion implantation
sub-second thermal annealing
Online Access:http://dx.doi.org/10.1080/23746149.2020.1871407

Internet

http://dx.doi.org/10.1080/23746149.2020.1871407

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