Enhancing Light Extraction Efficiency of Vertical Emission of AlGaN Nanowire Light Emitting Diodes With Photonic Crystal
AlGaN alloys have been widely used to make ultraviolet light-emitting diodes (UV-LEDs) because its energy bandgap covers 200-360 nm wavelength range. However, AlGaN shows strong transverse magnetic polarization in deep UV range, which severely prevents light extraction from top surface of UV-LEDs. I...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8728225/ |