A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application

A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application

This paper develops a competing risk model to simultaneously analyze censored catastrophic failures and nonlinear degradation data of the NAND-based solid-state drives for space application. Two dominant failure modes are the hard failure of the controller due to single-event latch-up (SEL) and the...

Full description

Bibliographic Details
Main Authors: Peng Li, Wei Dang, Taichun Qin, Zeming Zhang, Congmin Lv
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Semiconductor device modeling
degradation
reliability engineering
space radiation
uncertainty
Online Access:https://ieeexplore.ieee.org/document/8642871/

Internet

https://ieeexplore.ieee.org/document/8642871/

Similar Items