Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor
In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localizati...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2016-03-01
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Series: | Electronics |
Subjects: | |
Online Access: | http://www.mdpi.com/2079-9292/5/1/11 |