Giant secondary grain growth in Cu films on sapphire
Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2013-08-01
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Series: | AIP Advances |
Online Access: | http://link.aip.org/link/doi/10.1063/1.4817829 |