Endurance and Retention Degradation of Intermediate Levels in Filamentary Analog RRAM

Endurance and Retention Degradation of Intermediate Levels in Filamentary Analog RRAM

The understanding of the retention and endurance degradation behavior of different levels of filamentary analog RRAM is critical for the development of the neuromorphic computing. This paper investigates the conductance distribution of different levels during retention and endurance tests. The low c...

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Bibliographic Details
Main Authors: Meiran Zhao, Bin Gao, Yue Xi, Feng Xu, Huaqiang Wu, He Qian
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Analog RRAM
reliability
retention
endurance
neuromorphic computing
Online Access:https://ieeexplore.ieee.org/document/8846220/

Internet

https://ieeexplore.ieee.org/document/8846220/

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