Low-temperature strain gauges based on silicon whiskers
To create low-temperature strain gauges based on p-type silicon whiskers tensoresistive characteristics of these crystals in 4,2—300 K temperature range were studied. On the basis of p-type Si whiskers with different resistivity the strain gauges for different materials operating at cryogenic temper...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2008-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2008/4_2008/pdf/07.zip |