Mechanisms of Oxygen Vacancy Aggregation in SiO2 and HfO2
Dielectric oxide films in electronic devices undergo significant structural changes during device operation under bias. These changes are usually attributed to aggregation of oxygen vacancies resulting in formation of oxygen depleted regions and conductive filaments. However, neutral oxygen vacancie...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2019-03-01
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| Series: | Frontiers in Physics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/article/10.3389/fphy.2019.00043/full |