Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD

Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD

Low residual stress in hydrogenated amorphous silicon-carbon (a-SixC1-x:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD) at temperature range of 100–200 °C was obtained. Profilometry, Fourier transform infrared (FTIR) spectroscopy and atomic force microscopy (AFM) measurements...

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Bibliographic Details
Main Authors: José Herrera-Celis, Claudia Reyes-Betanzo, Oscar Gelvez-Lizarazo, L.G. Arriaga, Adrián Itzmoyotl-Toxqui
Format: Article
Language:English
Published: Elsevier 2019-11-01
Series:Journal of Materials Research and Technology
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785419303990

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http://www.sciencedirect.com/science/article/pii/S2238785419303990

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