Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Equivalent Circuit Modeling of a Dual-Gate Graphene FET

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additio...

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Bibliographic Details
Main Authors: Saima Hasan, Abbas Z. Kouzani, M A Parvez Mahmud
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Electronics
Subjects:
graphene field effect transistor
ambipolar conduction
threshold voltage dependence
transconductance
quantum capacitance
Online Access:https://www.mdpi.com/2079-9292/10/1/63

Internet

https://www.mdpi.com/2079-9292/10/1/63

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