The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechan...

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Bibliographic Details
Main Authors: Kulinich O. A., Smyntyna V. A., Glauberman M. A., Chemeresyuk G. G., Yatsunskiy I. R.
Format: Article
Language:English
Published: Politehperiodika 2008-10-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
Online Access:http://www.tkea.com.ua/tkea/2008/5_2008/pdf/12.zip