Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors
This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measu...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-09-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-9292/4/3/614 |