An Analytical Scalable Lumped-Element Model for GaN on Si Inductors

An Analytical Scalable Lumped-Element Model for GaN on Si Inductors

In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented. This paper also presents a novel way of accurately modelling the lateral coupling in the substrate. The presented model can be applied to a...

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Bibliographic Details
Main Authors: Mario San Miguel Montesdeoca, Sergio Mateos Angulo, Daniel Mayor Duarte, Javier Del Pino, Javier A. Garcia Y Garcia, Sunil L. Khemchandani
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Inductor model
lateral coupling
octagonal inductor
square inductor
tapered inductor
Online Access:https://ieeexplore.ieee.org/document/9036906/

Internet

https://ieeexplore.ieee.org/document/9036906/

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