Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate perovskite films by analysing the Kikuchi lines.

Bibliographic Details
Main Authors: H. Y. Sun, Z. W. Mao, T. W. Zhang, L. Han, T. T. Zhang, X. B. Cai, X. Guo, Y. F. Li, Y. P. Zang, W. Guo, J. H. Song, D. X. Ji, C. Y. Gu, C. Tang, Z. B. Gu, N. Wang, Y. Zhu, D. G. Schlom, Y. F. Nie, X. Q. Pan
Format: Article
Language:English
Published: Nature Publishing Group 2018-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-018-04903-4

Internet

https://doi.org/10.1038/s41467-018-04903-4

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